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Hydraulic Machines - Technical Specification for Pressure Fluctuation Transposition - Part 3：Reversible Pump-turbine

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PACKAGING OF COMPONENTS FOR AUTOMATIC HANDLING –<br /> <br /> Part 3-3: Packaging of surface mount components on continuous paper tapes for Auto Loading Feeder

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PACKAGING OF COMPONENTS FOR AUTOMATIC HANDLING –<br /> <br /> Part 3-4: Packaging of surface mount components on continuous embossed tapes for Auto Loading Feeder

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Internet of Things (IoT) – Reference architecture guidance for ISO/IEC 30141

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High-voltage test techniques - Infrared thermal imaging inspection of high-voltage electrical equipment

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Nuclear Power Plants - Instrumentation, control and electrical power systems - Application of simulation techniques

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<p>Electromagnetic compatibility (EMC) – Test method for measuring of transfer impedance Z_T and screening attenuation a_S or coupling attenuation a_C on of connectors and assemblies up to and above 3 GHz -– Triaxial Ttube in tube method</p>

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Guidance for coupling attenuation and screening attenuation measurement of hybrid cables and assemblies - Triaxial method (IEC 62153-5-x)

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IEC 62783-1-3 Ed 1.0: Twinax cables for digital communications - Part 1-3: Time-domain test methods for Twinax cables for digital communications, Propagation delay, intra-pair skew and inter-pair skew

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Specification of a TD measurement method for twin-axial cables

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Radio-frequency connectors - Part 1-8: Electrical test methods -Voltage standing wave ratio for a single connector by double connector method

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Radio-frequency connectors –Part XX: Sectional specification-RF coaxial connectors with 0,6 mm inner diameter of outer conductor-Characteristic impedance 50 Ω– (type 0,6

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Semiconductor device - The recognition criteria of defects in indium phosphide epitaxial wafers - Part 2: Test method for defects using optical microscopy

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Semiconductor device - The recognition criteria of defects in indium phosphide epitaxial wafers - Part 3: Test method for defects using scanning electron microscopy

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General Method for Calculating the Carbon Footprint of Semiconductor Products up to the Manufacturing Process

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Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 6: Procedure for identifying and evaluating defects using a combined method of optical inspection, photoluminescence and X-ray topography

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Integrated Circuits - Standard roadmap for chiplet ICs

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integrated circuits – Three Dimensional Integrated Circuits Part x: In-line thermal measurement of warpage

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