Projekti

Internet of Things (IoT) – Reference architecture guidance for ISO/IEC 30141

30.60   Završetak izjašnjavanja o nacrtu komisije standarda

High-voltage test techniques - Infrared thermal imaging inspection of high-voltage electrical equipment

10.60   Završetak izjašnjavanja o predlogu

Nuclear Power Plants - Instrumentation, control and electrical power systems - Application of simulation techniques

00.00   Podnet predlog novog projekta

<p>Electromagnetic compatibility (EMC) – Test method for measuring of transfer impedance Z_T and screening attenuation a_S or coupling attenuation a_C on of connectors and assemblies up to and above 3 GHz -– Triaxial Ttube in tube method</p>

00.99   Predlog novog projekta se prihvata

Guidance for coupling attenuation and screening attenuation measurement of hybrid cables and assemblies - Triaxial method (IEC 62153-5-x)

00.00   Podnet predlog novog projekta

IEC 62783-1-3 Ed 1.0: Twinax cables for digital communications - Part 1-3: Time-domain test methods for Twinax cables for digital communications, Propagation delay, intra-pair skew and inter-pair skew

00.00   Podnet predlog novog projekta

Specification of a TD measurement method for twin-axial cables

00.00   Podnet predlog novog projekta

Radio-frequency connectors - Part 1-8: Electrical test methods -Voltage standing wave ratio for a single connector by double connector method

00.99   Predlog novog projekta se prihvata

Radio-frequency connectors –Part XX: Sectional specification-RF coaxial connectors with 0,6 mm inner diameter of outer conductor-Characteristic impedance 50 Ω– (type 0,6

10.20   Početak izjašnjavanja o predlogu

Semiconductor device - The recognition criteria of defects in indium phosphide epitaxial wafers - Part 2: Test method for defects using optical microscopy

10.60   Završetak izjašnjavanja o predlogu

Semiconductor device - The recognition criteria of defects in indium phosphide epitaxial wafers - Part 3: Test method for defects using scanning electron microscopy

10.60   Završetak izjašnjavanja o predlogu

General Method for Calculating the Carbon Footprint of Semiconductor Products up to the Manufacturing Process

10.20   Početak izjašnjavanja o predlogu

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 6: Procedure for identifying and evaluating defects using a combined method of optical inspection, photoluminescence and X-ray topography

10.20   Početak izjašnjavanja o predlogu

Integrated Circuits - Standard roadmap for chiplet ICs

00.00   Podnet predlog novog projekta

integrated circuits – Three Dimensional Integrated Circuits Part x: In-line thermal measurement of warpage

00.00   Podnet predlog novog projekta

Integrated circuits – Part X: Standardization Roadmap for Fan-Out Packages

00.00   Podnet predlog novog projekta

IEC60191-6-23 Ed.1.0 :Standardization roadmap for fan-out packages

00.99   Predlog novog projekta se prihvata

Thermal standardization on semiconductor packages - Part 2-3: 3D thermal simulation models of semiconductor packages for steady-state analysis - LQFP packages

10.60   Završetak izjašnjavanja o predlogu