delSRPS EN IEC 63275-1:2021

Полупроводнички уређаји - Метода испитивања поузданости дискретних метал-оксидних полупроводничких транзистора са ефектом силицијум карбида - Део 1: Метода испитивања за температурну нестабилност пристрасности

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

Апстракт

This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).