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delSRPS EN IEC 63275-1:2021

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

General information

40.98     May 26, 2021

ISS

N022

European Norm

31.080.30  

English  

Scope

This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).

Life cycle

NOW

ABANDON
delSRPS EN IEC 63275-1:2021
40.98 Project deleted
May 26, 2021

Related project

Adopted from prEN IEC 63275-1:2021