delSRPS EN IEC 63275-1:2021

Poluprovodnički uređaji - Metoda ispitivanja pouzdanosti diskretnih metal-oksidnih poluprovodničkih tranzistora sa efektom silicijum karbida - Deo 1: Metoda ispitivanja za temperaturnu nestabilnost pristrasnosti

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

Apstrakt

This part of IEC 63275-1 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10h).