Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 6: Procedure for identifying and evaluating defects using a combined method of optical inspection, photoluminescence and X-ray topography
General information
10.60Oct 16, 2026
IEC
TC 47
International Standard
Life cycle
NOW
PROJECT PNW 47-3029 ED1 10.60
Close of voting Oct 16, 2026