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SRPS EN 62979:2020

Photovoltaic module - Bypass diode - Thermal runaway test

Jul 31, 2020

General information

60.60     Jul 31, 2020

ISS

N082

European Norm

27.160  

English  

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Scope

IEC 62979:2017(E) provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

Life cycle

NOW

PUBLISHED
SRPS EN 62979:2020
60.60 Standard published
Jul 31, 2020

REVISED BY

PROJECT
prSRPS EN IEC 62979:2025

Related project

Adopted from EN 62979:2017

Adopted from IEC 62979:2017 ED1 IDENTICAL