delSRPS EN 63068-1:2017

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

General information

Current stage: 30.98 Effective date: Apr 9, 2018

Next stage: 30.99 Next stage date: Nov 20, 2017

Originator: ISS

Owner: N022

Type: European Norm

Note: Odustaje se zbog toga što je CLC odustao.

Scope

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

delSRPS EN 63068-1:2017

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

General information

Scope

Life cycle

NOW

Related project

Adopted from prEN 63068-1