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delSRPS EN IEC 63275-2:2021

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

General information

40.98     May 26, 2021

ISS

N022

European Norm

English  

Scope

This part of IEC 63275-2 gives the test method and a procedure using this method to evaluate the on-state voltage change and on-resistance change of silicon carbide (SiC) 35 power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

Life cycle

NOW

ABANDON
delSRPS EN IEC 63275-2:2021
40.98 Project deleted
May 26, 2021

Related project

Adopted from prEN IEC 63275-2:2021