This part of IEC 63275-2 gives the test method and a procedure using this method to evaluate the on-state voltage change and on-resistance change of silicon carbide (SiC) 35 power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.
ABANDON
delSRPS EN IEC 63275-2:2021
40.98
Project deleted
May 26, 2021