20.20 Oct 12, 2026
ISO
ISO/TC 206
International Standard
This document defines a method for evaluating effective in-plane thermal conductivity and conductance of a metalized ceramic substrate bearing a heater chip as an imitation of a SiC power semiconductor. The method provides an indicator for in-plane heat transfer properties of metalized ceramic substrates employed in high-power modules.
PROJECT
ISO/WD 4825-4
20.20
Working draft (WD) study initiated
Oct 12, 2026