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SRPS EN 62417:2011

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Apr 21, 2011

General information

60.60     Apr 21, 2011

ISS

N022

European Norm

31.080  

English  

From plan 2011

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Scope

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Life cycle

NOW

PUBLISHED
SRPS EN 62417:2011
60.60 Standard published
Apr 21, 2011

Related project

Adopted from EN 62417:2010