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SRPS EN IEC 60749-17:2020

Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation

Mar 24, 2020

General information

60.60     Mar 24, 2020

ISS

N022

European Norm

31.080.01  

English  

sednica 2020-03-13

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Scope

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
The objectives of the test are as follows:
a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and
b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).

Life cycle

PREVIOUSLY

WITHDRAWN
SRPS EN 60749-17:2008

NOW

PUBLISHED
SRPS EN IEC 60749-17:2020
60.60 Standard published
Mar 24, 2020

Related project

Adopted from EN IEC 60749-17:2019

Adopted from IEC 60749-17:2019 ED2 IDENTICAL