30.98 Aug 23, 2019
30.99 Dec 11, 2019
ISS
European Norm
English
IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.
ABANDON
delSRPS EN IEC 63229:2019
30.98
Project deleted
Aug 23, 2019