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delSRPS EN IEC 63229:2019

Semiconductor devices – The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate

General information

30.98     Aug 23, 2019

30.99    Dec 11, 2019

ISS

N022

European Norm

English  

Odustaje se zbog toga što je CLC odustao.

Scope

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

Life cycle

NOW

ABANDON
delSRPS EN IEC 63229:2019
30.98 Project deleted
Aug 23, 2019

Related project

Adopted from prEN IEC 63229

Adopted from IEC 63229:2021 ED1 IDENTICAL