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delSRPS EN IEC 63229:2019

Poluprovodničke komponente - Klasifikacija oštećenja epitaksijalnih pufera galijum-nitrid na podlozi od silicijum-karbida

Semiconductor devices – The classification of defects in gallium nitride epitaxial wafers on silicon carbide substrate

Опште информације

30.98     23. 8. 2019.

30.99    11. 12. 2019.

ISS

N022

Evropski standard

engleski  

Odustaje se zbog toga što je CLC odustao.

Apstrakt

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

Životni ciklus

TRENUTNO

NAPUŠTEN
delSRPS EN IEC 63229:2019
30.98 Projekat se briše iz plana rada komisije za standarde
23. 8. 2019.

Povezani projekti

Identičan sa prEN IEC 63229

Identičan sa IEC 63229:2021 ED1 IDENTICAL