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IEC 63068-3:2020 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Jul 13, 2020

General information

60.60     Jul 13, 2020

IEC

TC 47

International Standard

31.080.99  

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Scope

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

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PUBLISHED
IEC 63068-3:2020 ED1
60.60 Standard published
Jul 13, 2020