IEC 63068-3:2020 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

Datum objavljivanja: 13. 7. 2020.

Опште информације

Trenutna faza: 60.60 Effective date: 13. 7. 2020.

Inicijator: IEC

Pripada: TC 47

Vrsta: Međunarodni standard

ICS: 31.080.99

Jezik: engleski francuski

Kupovina

Status: Objavljen

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Apstrakt

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

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TRENUTNO

OBJAVLJEN
IEC 63068-3:2020 ED1
60.60 Standard objavljen
13. 7. 2020.