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IEC 63740 ED1

Guideline for Gate Oxide Reliability and Robustness Evaluation Procedures for Silicon Carbide Power MOSFETs (Fast Track)

General information

40.20     Jul 17, 2026

PRVC    Oct 9, 2026

IEC

TC 47

International Standard

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PROJECT
IEC 63740 ED1
40.20 DIS ballot initiated: 12 weeks
Jul 17, 2026

National adoptions

naSRPS EN IEC 63740:2026  
ISS

Guideline for gate oxide reliability and robustness evaluation procedures for silicon carbide power mosfets (Fast Track)

40.20   DIS ballot initiated: 12 weeks

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