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naSRPS EN IEC 63740:2026

Guideline for gate oxide reliability and robustness evaluation procedures for silicon carbide power mosfets (Fast Track)

General information

40.20     Jul 17, 2026

40.60    Sep 18, 2026

ISS

N022

European Norm

English  

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Life cycle

NOW

PROJECT
naSRPS EN IEC 63740:2026
40.20 DIS ballot initiated: 12 weeks
Jul 17, 2026

Related project

Adopted from prEN IEC 63470:2026 IDENTICAL

Adopted from IEC 63740 ED1 IDENTICAL

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