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ISO 23812:2009

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials

Apr 8, 2009

General information

90.93     Aug 4, 2025

ISO

ISO/TC 201/SC 6

International Standard

71.040.40  

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Scope

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

Life cycle

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PUBLISHED
ISO 23812:2009
90.93 Standard confirmed
Aug 4, 2025