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ISO 23812:2009

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
8. 4. 2009.

Опште информације

90.93     4. 8. 2025.

ISO

ISO/TC 201/SC 6

Međunarodni standard

71.040.40  

engleski   francuski  

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Apstrakt

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

Životni ciklus

TRENUTNO

OBJAVLJEN
ISO 23812:2009
90.93 Odluka o potvrđivanju standarda
4. 8. 2025.