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ISO 14706:2014

Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy

Jul 25, 2014

General information

90.60     Sep 3, 2026

ISO

ISO/TC 201

International Standard

71.040.40  

English  

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Scope

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

Life cycle

PREVIOUSLY

WITHDRAWN
ISO 14706:2000

NOW

PUBLISHED
ISO 14706:2014
90.60 Close of review
Sep 3, 2026