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ISO 17560:2014

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

Sep 10, 2014

General information

90.93     Aug 4, 2025

ISO

ISO/TC 201/SC 6

International Standard

71.040.40  

English  

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Scope

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

Life cycle

PREVIOUSLY

WITHDRAWN
ISO 17560:2002

NOW

PUBLISHED
ISO 17560:2014
90.93 Standard confirmed
Aug 4, 2025