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ISO 17560:2014

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
10. 9. 2014.

Опште информације

90.93     4. 8. 2025.

ISO

ISO/TC 201/SC 6

Međunarodni standard

71.040.40  

engleski  

Kupovina

Objavljen

Jezik na kome želite da primite dokument.

Apstrakt

ISO 17560:2014 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

Životni ciklus

PRETHODNO

POVUČEN
ISO 17560:2002

TRENUTNO

OBJAVLJEN
ISO 17560:2014
90.93 Odluka o potvrđivanju standarda
4. 8. 2025.