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SRPS EN 62047-9:2013

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Jun 24, 2013

General information

60.60     Jun 24, 2013

ISS

N022

European Norm

31.080.99  

English  

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Scope

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

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PUBLISHED
SRPS EN 62047-9:2013
60.60 Standard published
Jun 24, 2013

Related project

Adopted from EN 62047-9:2011