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delSRPS EN 62373-1:2018

Semiconductor devices - Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) - Part 1: Fast BTI Test method

General information

Current stage: 30.98 Effective date: Jul 18, 2018

Next stage: 30.99 Next stage date: Jan 4, 2019

Originator: ISS

Owner: N022

Type: European Norm

Note: Odustaje se zbog toga što je CLC odustao.

Scope

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).

This document also defines the terms pertaining to the conventional BTI test method.

delSRPS EN 62373-1:2018

Semiconductor devices - Bias-temperature stability test for metal-oxide semiconductor field-effect transistors (MOSFET) - Part 1: Fast BTI Test method

General information

Scope

Life cycle

NOW

Related project

Adopted from prEN 62373-1