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delSRPS EN IEC 63284:2021

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

General information

40.98     May 26, 2021

ISS

N022

European Norm

English  

Scope

This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of Gallium Nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.

Life cycle

NOW

ABANDON
delSRPS EN IEC 63284:2021
40.98 Project deleted
May 26, 2021

Related project

Adopted from prEN IEC 63284:2021