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IEC 62373-1:2020 ED1

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
15. 7. 2020.

Опште информације

60.60     15. 7. 2020.

IEC

TC 47

Međunarodni standard

31.080.30  

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Apstrakt

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.

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TRENUTNO

OBJAVLJEN
IEC 62373-1:2020 ED1
60.60 Standard objavljen
15. 7. 2020.