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IEC 63505:2025 ED1

Guidelines for measuring the threshold voltage (<em>V</em><sub>T</sub>) of SiC MOSFETs
8. 4. 2025.

Опште информације

60.60     8. 4. 2025.

IEC

TC 47

Međunarodni standard

31.080.30  

engleski  

Kupovina

Objavljen

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Apstrakt

IEC 63505:2025 gives guidance on VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. The method is applicable for PBTI testing, NBTI and threshold voltage changes caused by switching events are excluded from the scope.
SiC MOSFETs have threshold voltage hysteresis caused by transient trap effects, which impacts the evaluation of the actual the VT shift caused by stress tests such as bias temperature instabilities (BTI).

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TRENUTNO

OBJAVLJEN
IEC 63505:2025 ED1
60.60 Standard objavljen
8. 4. 2025.