IEC TS 62607-12-3:2026 ED1

Nanomanufacturing - Key control characteristics - Part 12-3: 2D material-related products - Schottky barrier heights of 2D material-based field-effect transistors: temperature-dependent current–voltage measurements

Apstrakt

IEC TS 62607-12-3:2026, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• Schottky barrier height (SBH)
from the temperature-dependent current–voltage characterization results obtained from two-dimensional (2D) material-based electronic devices.
This document
• defines the Schottky barrier formed from the interface between a 2D material and a metal;
• specifies a 2D device sample for the measurement of the Schottky barrier;
• specifies the measurement procedure for the Schottky barrier formed at the interface within 2D devices;
• provides proper mathematical formulas used to extract the Schottky barrier formed from 2D-materials-based devices;
• provides relevant case studies; and
• provides relevant references