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IEC 62417:2010 ED1

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
22. 4. 2010.

Опште информације

60.60     22. 4. 2010.

IEC

TC 47

Međunarodni standard

31.080.30  

engleski   francuski  

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Objavljen

Jezik na kome želite da primite dokument.

Apstrakt

IEC 62417:2010 provides a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. It is applicable to both active and parasitic field effect transistors. The mobile charge can cause degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or by inversion of the base in bipolar transistors.

Životni ciklus

TRENUTNO

OBJAVLJEN
IEC 62417:2010 ED1
60.60 Standard objavljen
22. 4. 2010.