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IEC 62880-1:2017 ED1

Semiconductor devices - Stress migration test standard - Part 1: Copper stress migration test standard
23. 8. 2017.

Опште информације

60.60     23. 8. 2017.

IEC

TC 47

Međunarodni standard

31.080.01  

engleski  

Kupovina

Objavljen

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Apstrakt

IEC 62880-1:2017(E) describes a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV). This method is to be conducted primarily at the wafer level of production during technology development, and the results are to be used for lifetime prediction and failure analysis. Under some conditions, the method can be applied to package-level testing. This method is not intended to check production lots for shipment, because of the long test time.

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OBJAVLJEN
IEC 62880-1:2017 ED1
60.60 Standard objavljen
23. 8. 2017.