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IEC 63229:2021 ED1

Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
7. 4. 2021.

Опште информације

60.60     7. 4. 2021.

IEC

TC 47

Međunarodni standard

31.080.99  

engleski  

Kupovina

Objavljen

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Apstrakt

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.

Životni ciklus

TRENUTNO

OBJAVLJEN
IEC 63229:2021 ED1
60.60 Standard objavljen
7. 4. 2021.

Nacionalna preuzimanja

delSRPS EN IEC 63229:2019  
ISS

Poluprovodničke komponente - Klasifikacija oštećenja epitaksijalnih pufera galijum-nitrid na podlozi od silicijum-karbida

30.98   Projekat se briše iz plana rada komisije za standarde

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