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Glavni meni

IEC 63284:2022 ED1

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
21. 4. 2022.

Опште информације

60.60     21. 4. 2022.

IEC

TC 47

Međunarodni standard

31.080.30  

engleski   francuski  

Kupovina

Objavljen

Jezik na kome želite da primite dokument.

Apstrakt

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

Životni ciklus

TRENUTNO

OBJAVLJEN
IEC 63284:2022 ED1
60.60 Standard objavljen
21. 4. 2022.