IEC 63373:2022 ED1

Dynamic on-resistance test method guidelines for GaN HEMT based power conversion devices

Datum objavljivanja: 10. 2. 2022.

Опште информације

Trenutna faza: 60.60 Effective date: 10. 2. 2022.

Inicijator: IEC

Pripada: TC 47

Vrsta: Međunarodni standard

ICS: 31.080.99

Jezik: engleski francuski

Kupovina

Status: Objavljen

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Apstrakt

IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices;
b) GaN integrated power solutions;
c) the above in wafer and package levels.
The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.

Životni ciklus

TRENUTNO

OBJAVLJEN
IEC 63373:2022 ED1
60.60 Standard objavljen
10. 2. 2022.

Nacionalna preuzimanja

SRPS EN IEC 63373:2022

ISS

Smernice za dinamičke metode ispitivanja otpornosti vođenja GaN HEMT na kojima su bazirani uređaji za pretvaranje snage

60.60 Standard objavljen

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