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Glavni meni

IEC 62047-9:2011 ED1

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
13. 7. 2011.

Опште информације

60.60     13. 7. 2011.

IEC

TC 47/SC 47F

Međunarodni standard

31.080.99  

engleski   francuski  

Kupovina

Objavljen

Jezik na kome želite da primite dokument.

Apstrakt

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

Životni ciklus

TRENUTNO

OBJAVLJEN
IEC 62047-9:2011 ED1
60.60 Standard objavljen
13. 7. 2011.

ISPRAVKE / IZMENE

OBJAVLJEN
IEC 62047-9:2011/COR1:2012 ED1