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IEC 62979:2017 ED1

Photovoltaic modules - Bypass diode - Thermal runaway test
10. 8. 2017.

Опште информације

60.60     10. 8. 2017.

IEC

TC 82

Međunarodni standard

27.160  

engleski   francuski  

Kupovina

Objavljen

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Apstrakt

IEC 62979:2017 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

Životni ciklus

TRENUTNO

OBJAVLJEN
IEC 62979:2017 ED1
60.60 Standard objavljen
10. 8. 2017.

REVIDIRAN OD

PROJEKAT
IEC 62979 ED2

Nacionalna preuzimanja

SRPS EN 62979:2020  
ISS

Fotonaponski moduli- Bajpas dioda - Termička ispitivanja

60.60   Standard objavljen

N082 Saznaj više