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IEC 63068-1:2019 ED1

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
30. 1. 2019.

Опште информације

60.60     30. 1. 2019.

IEC

TC 47

Međunarodni standard

31.080.99  

engleski  

Kupovina

Objavljen

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Apstrakt

IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

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OBJAVLJEN
IEC 63068-1:2019 ED1
60.60 Standard objavljen
30. 1. 2019.