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ISO 5618-2:2024

Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 2: Method for determining etch pit density
30. 4. 2024.

Опште информације

60.60     30. 4. 2024.

ISO

ISO/TC 206

Međunarodni standard

81.060.30  

engleski   francuski  

Kupovina

Objavljen

Jezik na kome želite da primite dokument.

Apstrakt

This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films.
It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate.
It is applicable to defects with an etch pit density of ≤ 7 × 107 cm-2.

Životni ciklus

TRENUTNO

OBJAVLJEN
ISO 5618-2:2024
60.60 Standard objavljen
30. 4. 2024.