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ISO 17560:2002

Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
18. 7. 2002.
95.99   Povučen   10. 9. 2014.

Опште информације

95.99     10. 9. 2014.

ISO

ISO/TC 201/SC 6

Međunarodni standard

71.040.40  

engleski  

Kupovina

Povučen

Jezik na kome želite da primite dokument.

Apstrakt

ISO 17560:2002 specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1×1016 atoms/cm3 and 1×1020 atoms/cm3, and to crater depths of 50 nm or deeper.

Životni ciklus

TRENUTNO

POVUČEN
ISO 17560:2002
95.99 Povučen
10. 9. 2014.

REVIDIRAN OD

OBJAVLJEN
ISO 17560:2014